DocumentCode :
3181235
Title :
Effect of Annealing on Optical and Band Gap Alignments of CdTe Thin Films Prepared by Pulsed Laser Deposition
Author :
Savchuk, V. ; Kotlyarchuk, B. ; Zaginey, A. ; Lesyuk, R. ; Oszwaldowski, M.
Author_Institution :
Nat. Acad. of Sci of Ukraine, Lviv
fYear :
2007
fDate :
23-26 May 2007
Firstpage :
69
Lastpage :
71
Abstract :
The influence of postgrowth thermal annealing into various atmospheres (mercury and dry air) on the optical, electrical and photoelectric properties of CdTe thin films prepared by the pulsed laser deposition method were studied.
Keywords :
II-VI semiconductors; annealing; cadmium compounds; electrical resistivity; energy gap; infrared spectra; photoelectricity; pulsed laser deposition; semiconductor thin films; CdTe; annealing effect; band gap alignment; electrical properties; optical alignment; optical properties; photoelectric properties; postgrowth thermal annealing; pulsed laser deposition; Annealing; Conductivity; Optical films; Optical pulses; Photonic band gap; Pulsed laser deposition; Sputtering; Substrates; Temperature; Thin film devices; CdTe thin films; Pulsed Laser Deposition; postgrowth thermal annealing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Perspective Technologies and Methods in MEMS Design, 2007. MEMSTECH 2007. International Conference on
Conference_Location :
Lviv-Polyana
Print_ISBN :
978-966-553-614-7
Type :
conf
DOI :
10.1109/MEMSTECH.2007.4283426
Filename :
4283426
Link To Document :
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