Title :
1.26 μm GaInNAsSb-SQW lasers grown by gas-source MBE
Author :
Shimizu, H. ; Kumada, K. ; Uchiyama, S. ; Kasukawa, A.
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
Long wavelength-GaInNAsSb SQW lasers that include a small amount of Sb were successfully grown by gas-source molecular beam epitaxy (GSMBE). We confirmed that Sb reacts in the highly strained GaInNAs/GaAs system like a surfactant, which increase the critical thickness at which the growth mode changes from the 2-dimensional (2-D) growth to the 3-dimensional (3-D) growth. The GaInNAsSb lasers oscillated under CW operation at 1.258 μm at room temperature. The low CW threshold current of 12.4 mA and high characteristic temperature (T0) of 157 K were obtained for GaInNAsSb lasers, which is the best result for GaInNAs-based narrow stripe lasers
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; gallium compounds; indium compounds; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; 1.258 mum; 1.26 mum; 12.4 mA; 2-D growth; 25 to 85 C; 3-D growth; CW operation; GSMBE; GaAs; GaInNAs-based narrow stripe lasers; GaInNAsSb-GaAs; GaInNAsSb-SQW lasers; characteristic temperature; critical thickness; gas-source MBE growth; growth mode change; highly strained GaInNAs/GaAs system; long wavelength SQW lasers; low CW threshold current; room temperature; surfactant; Annealing; Crystallization; Gallium arsenide; Gas lasers; Laboratories; Laser modes; Molecular beam epitaxial growth; Plasma temperature; Research and development; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929128
