DocumentCode :
3182652
Title :
Self-assembled quantum-dot lasers and semiconductor optical amplifiers
Author :
Sugawara, M. ; Hatori, N. ; Akiyama, T. ; Nakata, Y.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
2001
fDate :
2001
Firstpage :
471
Lastpage :
472
Abstract :
Through the research of quantum dot lasers, we have obtained significant knowledge on carrier dynamics and optical gain of quantum dots like homogeneous broadening of single-dot optical gain and its effect on lasing spectra, the magnitude of gain as a function of current, ultrafast gain recovery, and a comprehensive theory. Based on the knowledge, we developed an operation theory of traveling-type quantum-dot semiconductor optical amplifiers (SOAs) to demonstrate that they can process high-bit-rate multiple-wavelength optical signals over 40 Gbit/s under gain saturation. This promises diverse optical functional devices, which meet with the demand of the next-generation broadband all-optical photonic networks
Keywords :
quantum well lasers; self-assembly; semiconductor optical amplifiers; semiconductor quantum dots; carrier dynamics; diverse optical functional devices; gain saturation; high-bit-rate multiple-wavelength optical signals; homogeneous broadening; lasing spectra; next-generation broadband all-optical photonic networks; optical gain; self-assembled quantum-dot lasers; semiconductor optical amplifiers; traveling-type quantum-dot semiconductor optical amplifiers; ultrafast gain recovery; Laser theory; Optical devices; Optical saturation; Quantum dot lasers; Quantum dots; Quantum mechanics; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
ISSN :
1092-8669
Print_ISBN :
0-7803-6700-6
Type :
conf
DOI :
10.1109/ICIPRM.2001.929178
Filename :
929178
Link To Document :
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