1.3 μm quantum-dot lasers with improved high temperature properties

InAs/GaInAs-quantum-dot lasers emitting at 1.3 μm have been grown by solid source molecular beam epitaxy, and the device performance has been studied. Laser structures with 6 dot layers in the active region yield the best results. They show low transparency current densities and high characteristic temperatures. Ridge waveguide lasers with a cavity length of 400 μm and high reflectivity coatings exhibit low threshold currents of 6 mA and high output powers of 18 mW in continuous wave (cw) operation at room temperature. Unmounted devices can be operated in cw mode beyond 80°C. In pulsed mode laser operation above 150°C could be achieved with uncoated 800 μm long devices