Title :
APRA: Adaptive Page Replacement Algorithm for NAND Flash Memory Storages
Author :
Shen, Baichuan ; Jin, Xin ; Song, Yong Ho ; Lee, Sang Sun
Author_Institution :
Sch. of Electron. & Comput. Eng., Hanyang Univ., Seoul, South Korea
Abstract :
This paper presents a new page replacement algorithm called Adaptive Page Replacement Algorithm (APRA), aiming at reducing the number of read, write, and erase operations and thereby improving the performance of NAND flash memory based storage systems. APRA uses a learning rule to adaptively and continually revise its parameter in response to diverse workloads with different access patterns. Experiments through simulation studies showed that the proposed algorithm performs better than other page replacement algorithms like LRU, CFLRU, CFLRU/C, LRU-WSR, in terms of read and write hit counts, and number of erase operations.
Keywords :
NAND circuits; flash memories; APRA; CFLRU; CFLRU-C; LRU; LRU-WSR; NAND flash memory storage; access patterns; adaptive page replacement algorithm; erase operation; learning rule; read operation; write operation; Application software; Buffer storage; Computer applications; Costs; File systems; Flash memory; Hard disks; Read-write memory; Solid state circuits; Sun; Buffer management; Embedded storages; LRU; NAND flash memory; Page replacement;
Conference_Titel :
Computer Science-Technology and Applications, 2009. IFCSTA '09. International Forum on
Conference_Location :
Chongqing
Print_ISBN :
978-0-7695-3930-0
Electronic_ISBN :
978-1-4244-5423-5
DOI :
10.1109/IFCSTA.2009.9