Title :
Integration of complementary NPN and PNP InAlAs/InGaAs HBTs
Author :
Cui, Delong ; Pavlidis, Dimitris ; Sawdai, Donald ; Chin, Patrick ; Block, Tom
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
In this work, monolithic integration of NPN and PNP InAlAs/InGaAs complementary HBTs was demonstrated using a regrowth approach by MBE. The integrated HBTs showed little degradation over similar discrete devices. The DC gain was 35 for both integrated NPN and PNP HBTs. fT of 79.6 GHz and fmax of 109 GHz were achieved for NPN devices while fT of 11.6 GHz and fmax of 22.6 GHz were achieved for PNP devices
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; 109 GHz; 11.6 GHz; 22.6 GHz; 79.6 GHz; DC gain; InAlAs-InGaAs; MBE regrowth; complementary NPN InAlAs/InGaAs HBT; complementary PNP InAlAs/InGaAs HBT; cutoff frequency; maximum oscillation frequency; monolithic integration; Etching; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Insulation; Monolithic integrated circuits; Silicon compounds; Space technology; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929188
