Title :
Distributed analysis of submicron-MESFET noise-properties
Author_Institution :
Tech. Sch. of Darmstadt, West Germany
Abstract :
A distributed MESFET noise analysis is presented and its results are used to determine the validity range of common lumped-element models. It is concluded that systematic investigation varying the equivalent-circuit elements within their realistic range confirmed that the distributed effects can be neglected in conventional submicron low-noise MESFETs. Practical gate-width design-values are given.<>
Keywords :
Schottky gate field effect transistors; electron device noise; semiconductor device models; solid-state microwave devices; design-values; distributed MESFET noise analysis; equivalent-circuit elements; low-noise MESFETs; lumped-element models; microwave devices; submicron-MESFET noise-properties; validity of lumped element models; Circuit noise; Electrodes; Equivalent circuits; FETs; Frequency measurement; Geometry; MESFETs; Noise generators;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22042
