Lumped and distributed scaling of MESFETs

Author

Mondal, J.P.

Author_Institution

Gen. Electr. Co., Syracuse, NY, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

351

Abstract

In power amplifier applications, it is very common to scaleup large MESFETs at the output from smaller MESFET devices that are easily measured and characterized. A systematic procedure is given to predict the small-signal performance of large devices from the measured and well-characterized elementary cells. The emphasis is on the distributed scaling and the method is compared with lumped scaling. Manifold distribution effects and other parasitics (such as airbridges, distribution of via holes) are accounted for. The prediction using distributed scaling showed good agreement with measured results.<>

Keywords

Schottky gate field effect transistors; field effect transistor circuits; microwave amplifiers; power amplifiers; power transistors; semiconductor device models; solid-state microwave devices; airbridges; distributed scaling; distribution effects; distribution of via holes; large MESFETs; lumped scaling; measured results; parasitics; power amplifier; small-signal performance; systematic procedure; well-characterized elementary cells; Bonding; Cutoff frequency; Electric variables measurement; FETs; Fingers; Frequency measurement; Inductance; Laboratories; MESFETs; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22048

Filename

22048