Fabrication and characterization of RF-MEMS switch in V-band

This paper presents a complete study from design to fabrication and characterization of a RF-MEMS switch implemented in Si-BCB technology. The topology of the switch is a cantilever which will be integrated into tunable filters for applications from W-frequency band to V-frequency band. Along the whole process, attention has been paid to correlate simulations (electromagnetic and mechanical) and technology parameters in order to ensure a reliable switch model. The measured RF performances of this component exhibit isolation around 15 dB at 60GHz in the up-state position and an insertion loss less than 2dB in the down-state.