DocumentCode :
3185452
Title :
Failure detecting technique of laser-induced diode links
Author :
Massiha, G.H. ; Chen, T.M.
Author_Institution :
Dept. of Biol. & Agric. Eng., Georgia Univ., Athens, GA, USA
fYear :
1993
fDate :
4-7 Apr 1993
Firstpage :
0.625
Abstract :
High Joule heating causes an increase in the temperature of high-resistance laser-diffused diode links (LDLs) and creates reliability problems. The authors report experimental studies of the reliability of LDLs using accelerated lifetime testing and excess electrical noise measurement. LDL samples failure were observed around the oxide steps. Conventional electromigration of Al ions and formation of voids and hillocks caused device failure
Keywords :
1/f noise; electromigration; failure analysis; laser beam applications; life testing; semiconductor device noise; semiconductor device reliability; semiconductor device testing; semiconductor diodes; Al ions; Joule heating; accelerated lifetime testing; device failure; electromigration; excess electrical noise measurement; experimental studies; failure detection; hillocks; laser-induced diode links; oxide steps; reliability problems; voids; wafer scale integration; Diodes; Electric resistance; Electromigration; Immune system; Joining processes; Laser noise; Noise measurement; Resistance heating; Scanning electron microscopy; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southeastcon '93, Proceedings., IEEE
Conference_Location :
Charlotte, NC
Print_ISBN :
0-7803-1257-0
Type :
conf
DOI :
10.1109/SECON.1993.465737
Filename :
465737
Link To Document :
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