High performance GaAs power diodes

Films deposited with the Liquid Phase Epitaxy (LPE)technology on the monocristallic GaAs substrates for high voltage power p+-p-i-n-n+ GaAs structures has been developed. Proposed technological and hardware solutions of LPE allow the high efficiency of growing process of diode structures with defined ratings and high structural quality of epitaxial layers. The method and technology for fabrication of GaAs dies for nanosecond range with reverse voltage up to 1200V and current up to 100A is introduced The reverse recovery time of 20 nsec was achieved and could be preserved up to +260degC.