DocumentCode :
3186570
Title :
A predistortion linearizer for a class-F GaN HEMT power amplifier using two independently controlled diodes
Author :
Ando, Akihiro ; Takayama, Yoichiro ; Yoshida, Tsuyoshi ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Univ. of Electro-Commun., Chofu, Japan
fYear :
2009
fDate :
7-10 Dec. 2009
Firstpage :
269
Lastpage :
272
Abstract :
A novel pre-distortion technique using two independently bias-controlled Schottky diodes is proposed to compensate the complicated nonlinear characteristics of the AlGaN/GaN HEMT microwave class-F amplifier, in which inferior intermodulation distortions are often observed for an output power range of large back-off. The newly developed technique has made it possible to achieve both high drain efficiency and low intermodulation distortion simultaneously. The developed linearizer was fabricated in MMIC form and applied to a one watt AlGaN/GaN HEMT class-F amplifier operating at 1.9 GHz, where harmonic frequencies up to the fifth higher order were controlled. With the diode predistortion linearizer, the third-order intermodulation distortion ratio (IMD3) of the 1.9-GHz class-F GaN HEMT power amplifier was improved over power output from 0 to 18 dBm. The IMD3 was under -40 dBc at output powers lower than 10 dBm. The amplifier had a maximum drain efficiency of 70.6 % at output power of 27 dBm.
Keywords :
MMIC amplifiers; Schottky diodes; UHF amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; intermodulation distortion; microwave diodes; power amplifiers; wide band gap semiconductors; AlGaN-GaN; MMIC; class-F GaN HEMT power amplifier; diode predistortion linearizer; efficiency 70.6 percent; frequency 1.9 GHz; harmonic frequencies; independently bias-controlled Schottky diodes; maximum drain efficiency; microwave class-F amplifier; third-order intermodulation distortion ratio; Aluminum gallium nitride; Gallium nitride; HEMTs; Intermodulation distortion; Microwave amplifiers; Microwave theory and techniques; Power amplifiers; Power generation; Predistortion; Schottky diodes; Class-F power amplifier; Diode linearizer; GaN HEMT; Intermodulation distortion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
Type :
conf
DOI :
10.1109/APMC.2009.5385385
Filename :
5385385
Link To Document :
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