• DocumentCode
    3187178
  • Title

    Investigations of dose rate effects on CMOS submicronic technologies

  • Author

    Corbiere, Thierry ; Venturin, Jean Louis

  • Author_Institution
    MATRA MHS, Nantes, France
  • fYear
    1995
  • fDate
    34899
  • Firstpage
    85
  • Lastpage
    89
  • Abstract
    Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates which are far from the real conditions found in the natural space environment. When geostationary satellites experienced dose rate around 1 to 2 Krad(Si) per year, the dose rate recommended by the two major test procedures vary from 30 Rad(Si)/hour up to 300Krad(Si)/hour. One can think that those test conditions do not reflect the permanent effects that could occur during the lifetime of the mission. The objective of the study is to evaluate the dose rate effects on circuits representative of the MATRA MHS state-of-the-art CMOS technology used for space parts manufacturing and provide recommendations for future new CMOS technologies characterizations
  • Keywords
    CMOS integrated circuits; gamma-ray effects; radiation hardening (electronics); space vehicle electronics; CMOS submicron technologies; MATRA MHS; MOS circuits; cobalt 60 source; dose rate; geostationary satellite; space environment; total dose; CMOS technology; Circuit testing; Degradation; Life testing; MOS devices; Manufacturing; Radiation hardening; Satellites; Space technology; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE
  • Conference_Location
    Madison, WI
  • Print_ISBN
    0-7803-3100-1
  • Type

    conf

  • DOI
    10.1109/REDW.1995.483403
  • Filename
    483403