DocumentCode
3187178
Title
Investigations of dose rate effects on CMOS submicronic technologies
Author
Corbiere, Thierry ; Venturin, Jean Louis
Author_Institution
MATRA MHS, Nantes, France
fYear
1995
fDate
34899
Firstpage
85
Lastpage
89
Abstract
Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates which are far from the real conditions found in the natural space environment. When geostationary satellites experienced dose rate around 1 to 2 Krad(Si) per year, the dose rate recommended by the two major test procedures vary from 30 Rad(Si)/hour up to 300Krad(Si)/hour. One can think that those test conditions do not reflect the permanent effects that could occur during the lifetime of the mission. The objective of the study is to evaluate the dose rate effects on circuits representative of the MATRA MHS state-of-the-art CMOS technology used for space parts manufacturing and provide recommendations for future new CMOS technologies characterizations
Keywords
CMOS integrated circuits; gamma-ray effects; radiation hardening (electronics); space vehicle electronics; CMOS submicron technologies; MATRA MHS; MOS circuits; cobalt 60 source; dose rate; geostationary satellite; space environment; total dose; CMOS technology; Circuit testing; Degradation; Life testing; MOS devices; Manufacturing; Radiation hardening; Satellites; Space technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE
Conference_Location
Madison, WI
Print_ISBN
0-7803-3100-1
Type
conf
DOI
10.1109/REDW.1995.483403
Filename
483403
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