Title :
Silicon permeable base transistors for low-phase-noise oscillator applications up to 20 GHz
Author :
Rathman, D.D. ; Niblack, W.K.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
Abstract :
Silicon permeable-base transistors (PBTs) have been fabricated that exhibit a small-signal short-circuit current gain frequency exceeding 20 GHz and a maximum frequency of oscillation near 30 GHz. This transistor has been used to realize voltage-controlled oscillators at C-band, X-band, and Ku-band that have provided low phase noise. The advantage of the device for oscillator applications arises because the Si PBT combines the low 1/f and phase noise properties of Si bipolar devices with the high-frequency capability of the GaAs FET. The current device designs have not yet been optimized for either minimum-phase noise or maximum output power.<>
Keywords :
bipolar transistors; elemental semiconductors; equivalent circuits; microwave oscillators; silicon; solid-state microwave circuits; solid-state microwave devices; variable-frequency oscillators; 20 to 30 GHz; C-band; Ku-band; PBTs; SHF; Si; X-band; low 1/f noise; low-phase-noise oscillator applications; microwave oscillators; permeable base transistors; small-signal short-circuit current gain frequency; voltage-controlled oscillators; Bridge circuits; Doping profiles; Etching; Fabrication; Frequency; Gallium arsenide; Gratings; Implants; Oscillators; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22092
