Title :
Analysis and design of wide-band power amplifier using GaN
Author :
Sim, Jaewoo ; Lim, Jaeyeon ; Park, Myoungkyu ; Kang, Wenwoo ; Mah, Bak-IL
Author_Institution :
Peopleworks, Inc., Seoul, South Korea
Abstract :
This paper presents analysis and design of wide band power amplifiers. Two types of 20Watt broadband power amplifier-I and amplifier- II using GaN have been designed. The RF performance of the broadband amplifier-I (Non Feedback matching networks) has been compared with the broadband amplifier-II (Conventional Feedback matching networks). It achieves 20 Watts output power with 12dB ± 1.0dB gain from 500 MHz to 2500 MHz at VDS=28V. The broadband amplifier-I shows a significantly improved return loss and size. The broadband amplifier-I also has an efficiency improved by 6 percent with gain increased by 2.3dB from 500MHz to 2.5GHz. At lower frequencies from 500 MHz to 1000 MHz, the output power is 20 Watts with 40% efficiency. In addition, a broadband choke structure with a new technique was developed to obtain good isolation and low loss over the desired bandwidth.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; wide band gap semiconductors; wideband amplifiers; GaN; broadband choke structure; broadband power amplifier-I; broadband power amplifier-II; frequency 500 MHz to 2500 MHz; gain 12 dB; nonfeedback matching networks; power 20 W; return loss; voltage 28 V; wide band power amplifiers; Bandwidth; Broadband amplifiers; Feedback; Gallium nitride; Impedance; Inductors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Gallium Nitride; Non-feedback; Power amplifiers; broadband amplifiers; broadband choke;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5385457