DocumentCode :
31882
Title :
High-Performance Pentacene Thin-Film Transistor With High- 
HfLaON as Gate Dielectric
Author :
Chuan Yu Han ; Wing Man Tang ; Cheung Hoi Leung ; Chi Ming Che ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron., Univ. of Hong Kong, Hong Kong, China
Volume :
34
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
1397
Lastpage :
1399
Abstract :
Pentacene organic thin-film transistor (OTFT) using high- k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O2/N2 ambience with different N2 flow rates and then annealed in N2. All the OTFTs can operate at low voltage with a threshold voltage as low as -0.53 V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm2/V·s, which is about twice that of its counterpart with HfLaO gate dielectric.
Keywords :
carrier mobility; hafnium compounds; high-k dielectric thin films; organic semiconductors; sputter deposition; thin film transistors; HfLaON; N2 flow rates; carrier mobility; high-k HfLaON gate dielectric; nitrogen content effects; pentacene organic thin-film transistor; reactive sputtering; threshold voltage; Dielectrics; Logic gates; Nitrogen; Organic thin film transistors; Pentacene; Fluorination; HfLaON; high- $kappa$ dielectric; organic thin-film transistor (OTFT);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2281661
Filename :
6615967
Link To Document :
