Title :
High-frequency large-signal physical modeling of microwave semiconductor devices
Author :
Alsunaidi, M.A. ; El-Ghazaly, Samir M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
High frequency characterization of microwave semiconductor devices is presented based on physical modeling. The active device is simulated using a fast and accurate model based on the hydrodynamic equations which simulate the behavior of short gate field-effect transistors (FETs). The device response is analyzed as a function of the input signal frequency and its amplitude.<>
Keywords :
frequency response; microwave field effect transistors; semiconductor device models; active device; device response; field-effect transistors; high frequency characterization; high-frequency modeling; hydrodynamic equations; large-signal physical modeling; microwave semiconductor devices; short gate FETs; Electromagnetic heating; Electrons; Equivalent circuits; FETs; Frequency; Microwave devices; Nonlinear equations; Partial differential equations; Poisson equations; Semiconductor devices;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405930
