DocumentCode :
3190762
Title :
Analysis of a mask-based nanowire decoder
Author :
Rachlin, Eric ; Savage, John E. ; Gojman, Benjamin
Author_Institution :
Dept. of Comput. Sci., Brown Univ., Providence, RI, USA
fYear :
2005
fDate :
11-12 May 2005
Firstpage :
6
Lastpage :
13
Abstract :
A key challenge facing nanotechnologies will be controlling nanoarrays, two orthogonal sets of nanowires that form a crossbar, using a moderate number of mesoscale wires. Three methods have been proposed to use mesoscale wires to control individual nanowires. The first is based on nanowire differentiation during manufacture, the second makes random doped connections between nanowires and mesoscale wires, and the third, a mask-based approach, interposes high-K dielectric regions between nanowires and mesoscale wires. All three addressing schemes involve a stochastic step in their implementation. In this paper, we analyze the mask-based approach and show that a large number of mesoscale control wires is necessary for its realization.
Keywords :
field effect transistors; interconnections; lithography; masks; nanowires; network analysis; semiconductor doping; semiconductor superlattices; high-K dielectric regions; mask analysis; mesoscale wires; nanoarrays control; nanotechnology; nanowire decoder; nanowire differentiation; Computer science; Decoding; FETs; High-K gate dielectrics; Manufacturing; Programmable logic arrays; Stochastic processes; Switches; Very large scale integration; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI, 2005. Proceedings. IEEE Computer Society Annual Symposium on
Print_ISBN :
0-7695-2365-X
Type :
conf
DOI :
10.1109/ISVLSI.2005.17
Filename :
1430103
Link To Document :
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