DocumentCode :
3190818
Title :
Photoluminescence and photoluminescence excitation studies on CuInSe2 absorber layers for solar cells
Author :
Zott, S. ; Leo, K. ; Ruckh, M. ; Schock, H. -W
Author_Institution :
Inst. fur Angewandte Photophys., Tech. Univ. Dresden, Germany
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
817
Lastpage :
820
Abstract :
We perform a systematic photoluminescence (PL) study on CuInSe2 solar cell absorber layers. In particular, we investigate Cu/In-ratios from 1.47 to 0.46 which show that the PL response is strongly correlated to the composition. Detailed information about origin and distribution of various defect levels is obtained. Additionally, the influence of sodium diffusion from the substrate on the optical response is investigated
Keywords :
copper compounds; crystal defects; diffusion; indium compounds; optical properties; photoluminescence; solar cells; substrates; ternary semiconductors; Cu/In-ratios; CuInSe2; CuInSe2 absorber layers; defect levels; optical response; photoluminescence; photoluminescence excitation; sodium diffusion; solar cells; substrate; Composite materials; Glass; Laser excitation; Optical films; Optical materials; Optical surface waves; Photoluminescence; Photonic band gap; Photovoltaic cells; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564253
Filename :
564253
Link To Document :
بازگشت