Title :
Correlation of total gate current fluence with PMOS degradation
Author :
Reimbold, Gilles ; Saint-Bonnet, Pierre ; Gautier, Jacques
Author_Institution :
D. Leti Ceng, Grenoble, France
Abstract :
Systematic measurements of gate current decrease and total gate current fluence performed on buried channel PMOS transistors of different technologies during aging are discussed. Correlations with usual parameter shifts are presented, allowing original investigations of saturation effects and lifetime determination. New opportunities for correlations with Q/sub BD/ measurements and injection on capacitors are opened.<>
Keywords :
CMOS integrated circuits; VLSI; ageing; hot carriers; integrated circuit technology; life testing; reliability; PMOS degradation; Q/sub BD/ measurements; aging; buried channel PMOS transistors; correlation; different technologies; gate current decrease; hot carrier induced degradation; injection on capacitors; lifetime determination; parameter shifts; saturation effects; short channel effects; submicron CMOS; systematic measurements; total gate current fluence; Aging; Automatic testing; CMOS technology; Current measurement; Degradation; Electron traps; MOSFETs; Space technology; Stress; Transconductance;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66099
