Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes

A generic carrier-based core model for undoped four-terminal double-gate (DG) MOSFET valid for symmetric, asymmetric, SOI, and independent gate operation modes is presented in this paper. Based on the exact solution of the 1-D Poisson´s equation of a general DG-MOSFET configure, a generic drain current model is derived from Pao-Sah´s double integral in terms of the carrier concentration. The model is verified by extensive comparisons with 2-D numerical simulations under different bias conditions to all four terminals. The concise mathematic formulation allows the unification various double-gate models into a carrier-based core model for compact DG-MOSFET model development.