Multiple quantized states lasing in short GaAs quantum well lasers

Author

Karouta, F. ; Langeler, H.A. ; Smalbrugge, E. ; van der Vleuten, W.C.

Author_Institution

COBRA Inter-Univ. Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol., Netherlands

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

146

Abstract

Etched mirror lasers offer the possibility of being integrable in Opto-Electronic Integrated Circuits (OEIC). A versatile processing technique of GaAs/AlGaAs Wet Chemically Etched Mirror Lasers (WCEML) has been developed previously. It is applicable to all laser structures in the InGaAs/AlGaAs/GaAs system. A special set of masks allowed us to vary the cavity lengths of ridge waveguide type devices from 750 μm down to 11 μm and ridge widths of 4, 6 and 10 μm. The processing requires four photolithography steps. In this paper we report on the results obtained from four different GRINSCH laser structures: one having a bulk GaAs active layer (50 nm thick) while the others have 2, 3 and 5 QWs of 7 nm GaAs as an active layer respectively

Keywords

III-V semiconductors; gallium arsenide; quantum well lasers; GRINSCH laser; GaAs; cavity length; mask; multiple quantized states; photolithography; quantum well laser; ridge waveguide; wet chemically etched mirror laser; Chemical lasers; Chemical processes; Gallium arsenide; Indium gallium arsenide; Lithography; Mirrors; Optoelectronic devices; Quantum well lasers; Waveguide lasers; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645314

Filename

645314