Band gap tuning of visible laser material

Author

Hamilton, C.J. ; Kowalski, O.P. ; McIlvaney, K. ; Marsh, J.H. ; Button, C.C.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

451

Abstract

Here we report the use of dielectric cap intermixing for bandgap tuning in the AlGaInP material system. Bandgap changes are measured using 77 K photoluminescence. In addition, bandgap shifted lasers fabricated from the intermixed material demonstrate that the intermixing process does not promote dopant diffusion and that the optical quality of the material is retained. To our knowledge this is the first demonstration of a reliable QWI process for the AlGaInP material system

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium compounds; indium compounds; laser tuning; optical materials; photoluminescence; quantum well lasers; 77 K; AlGaInP; AlGaInP material system; band gap tuning; bandgap shifted lasers; dielectric cap intermixing; dopant diffusion; intermixed material; optical quality; photoluminescence; reliable QWI process; visible laser material; Dielectric materials; Diode lasers; Laser tuning; Optical materials; Optical waveguides; Photoluminescence; Photonic band gap; Quantum well lasers; Rapid thermal annealing; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645512

Filename

645512