Title :
Theoretical analysis of the temperature dependence of threshold current density of a quantum dot laser
Author :
Asryan, Levon V. ; Suris, Robert A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
In this work, we give a detailed analysis of the temperature dependence of jth temperature dependences of both of the components of jth associated with the radiative recombination in quantum dot lasers in the optical confinement layer (OCL). Temperature dependences of the optimum surface density of QDs and the optimum thickness of the OCL are obtained
Keywords :
current density; laser theory; quantum well lasers; semiconductor device models; semiconductor quantum dots; jth temperature dependence; optical confinement layer; optimum surface density; optimum thickness; quantum dot laser; quantum dot lasers; radiative recombination; temperature dependence; threshold current density; Fluctuations; Laser theory; Quantum dot lasers; Quantum dots; Quantum mechanics; Quantum well lasers; Radiative recombination; Temperature dependence; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645536
