• DocumentCode
    319253
  • Title

    Theoretical analysis of the temperature dependence of threshold current density of a quantum dot laser

  • Author

    Asryan, Levon V. ; Suris, Robert A.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    2
  • fYear
    1997
  • fDate
    10-13 Nov 1997
  • Firstpage
    496
  • Abstract
    In this work, we give a detailed analysis of the temperature dependence of jth temperature dependences of both of the components of jth associated with the radiative recombination in quantum dot lasers in the optical confinement layer (OCL). Temperature dependences of the optimum surface density of QDs and the optimum thickness of the OCL are obtained
  • Keywords
    current density; laser theory; quantum well lasers; semiconductor device models; semiconductor quantum dots; jth temperature dependence; optical confinement layer; optimum surface density; optimum thickness; quantum dot laser; quantum dot lasers; radiative recombination; temperature dependence; threshold current density; Fluctuations; Laser theory; Quantum dot lasers; Quantum dots; Quantum mechanics; Quantum well lasers; Radiative recombination; Temperature dependence; Threshold current; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-3895-2
  • Type

    conf

  • DOI
    10.1109/LEOS.1997.645536
  • Filename
    645536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=319253