Near-bandgap ultrafast optical responses of furnace annealed arsenic-ion-implanted GaAs

Author

Lin, G.R. ; Pan, C.L. ; Hsu, T.M. ; Lee, W.C.

Author_Institution

Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

531

Abstract

Recently, a new class of photoconductors with excess-arsenic-related deep level defects, arsenic-ion-implanted (or GaAs:As⁺), has been the subject of intense study. Ultrafast carrier lifetimes, photoconductive and nonlinear optical responses were reported for as-implanted and RTA (rapid thermal annealing) annealed GaAs:As⁺. It is expected that the optimum furnace annealing will create arsenic precipitates which can enhance the performance of GaAs:As⁺ for photoconductive or nonlinear optical switching applications. The carrier dynamics of furnace-annealed GaAs:As⁺ is thus of substantial interests and is the focus of this paper

Keywords

III-V semiconductors; annealing; carrier lifetime; energy gap; gallium arsenide; high-speed optical techniques; ion implantation; photoconductivity; GaAs; arsenic-ion-implanted GaAs; carrier lifetime; deep level defect; furnace annealing; near-bandgap ultrafast optical response; nonlinear optical switching; photoconductor; precipitate; Furnaces; Gallium arsenide; Nonlinear optics; Particle beam optics; Photoconductivity; Photonic band gap; Rapid thermal annealing; Reflectivity; Temperature; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645554

Filename

645554