DocumentCode :
3193185
Title :
1.54 µm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation
Author :
Merghem, K. ; Azouigui, S. ; Zou, Q. ; Martinez, A. ; Chimot, N. ; Accard, A. ; Lelarge, F. ; Ramdane, A.
Author_Institution :
Lab. for Photonics & Nanostruct., CNRS, Marcoussis, France
fYear :
2010
fDate :
26-30 Sept. 2010
Firstpage :
178
Lastpage :
179
Abstract :
The tolerance to optical feedback of p-type doped InAs/InP quantum dash based DFB lasers is investigated. Optimized devices show a record -18 dB onset of coherence collapse compliant with 10 Gb/s Ethernet standard for isolator-free operation.
Keywords :
III-V semiconductors; distributed feedback lasers; indium compounds; laser feedback; quantum dash lasers; InAs-InP; coherence collapse; isolator free operation; optical feedback; p-type doped quantum dash based DFB lasers; wavelength 1.54 mum; Couplings; Indium phosphide; Laser feedback; Lasers; Modulation; Optical feedback; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
ISSN :
0899-9406
Print_ISBN :
978-1-4244-5683-3
Type :
conf
DOI :
10.1109/ISLC.2010.5642654
Filename :
5642654
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3193185
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