Superfilling CVD of copper using a catalytic surfactant

Chemical vapor deposition of copper using iodine as catalytic surfactant fills sub-micron holes and trenches in bottom-up fashion and results in a leveled film surface. Accelerated film growth in holes and trenches seems due to the accumulation of the catalytic surfactant at the bottom of the holes and trenches caused by the reduction of surface area during the film growth. High growth rate and good filling and leveling capability make this deposition method a strong candidate for manufacturing metal interconnects for next-generation microelectronic devices. It suggests that use of surfactants may enable other applications previously considered not viable in vacuum deposition.