Title :
High performance millimeter wave AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias
Author :
Hur, K.Y. ; McTaggart, R.A. ; Ventresca, M.P. ; Wohlert, R. ; Aucoin, L.M. ; Kazior, Thomas E.
Author_Institution :
Adv. Device Center, Raytheon Co., Lexington, MA, USA
Abstract :
Millimeter wave AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias and end source vias have been fabricated and characterized. Although DC IV characteristics of the HEMTs with individually grounded source finger vias and end source vias were similar, RF measurements yielded higher small signal gain on the HEMT with individually grounded source finger vias. Power measurements at 44 GHz further revealed that the HEMT with individually grounded source finger vias produced higher output power, power added efficiency, and associated gain compared to the HEMT with end source vias.<>
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 44 GHz; AlInAs-GaInAs-InP; DC IV characteristics; RF measurements; end source vias; individually grounded source finger vias; millimeter wave HEMTs; output power; power added efficiency; power measurements; small signal gain; Fingers; Gain measurement; HEMTs; Indium phosphide; MODFETs; Millimeter wave measurements; Power generation; Power measurement; RF signals; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405945
