DocumentCode :
3193848
Title :
A new baseband measurement system for characterization of memory effects in nonlinear microwave devices
Author :
Thorsell, Mattias ; Andersson, Kristoffer
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
fYear :
2012
fDate :
22-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
This paper presents a new measurement setup for characterization of memory effects in microwave devices. The proposed setup extends the standard LSNA to capture the baseband spectrum from DC up to 100 MHz. This enables characterizations of memory effects in nonlinear microwave devices when using wideband modulated signals as stimuli. The extension of the baseband spectrum down to DC is very important when characterizing slow memory effects, such as self-heating and trapping. The importance of this extension is illustrated by two-tone measurements and simulations on a GaN device to show the effects of the dynamics in the thermal impedance.
Keywords :
III-V semiconductors; gallium compounds; microwave devices; modulation; network analysers; semiconductor device measurement; wide band gap semiconductors; GaN; baseband measurement system; baseband spectrum; large signal network analyzer; nonlinear microwave device; self-heating; slow memory effect characterization; standard LSNA; thermal impedance; trapping; two-tone measurement; wideband modulated signal stimuli; Baseband; Current measurement; Frequency measurement; Microwave measurements; Microwave transistors; Radio frequency; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurement Conference (ARFTG), 2012 79th ARFTG
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-1229-5
Electronic_ISBN :
978-1-4673-1230-1
Type :
conf
DOI :
10.1109/ARFTG79.2012.6291190
Filename :
6291190
Link To Document :
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