Title :
Refractory metal carbide based diffusion barriers for copper metallization
Author :
Sun, S.C. ; Tsai, H.Y. ; Wang, S.J.
Author_Institution :
ProMOS Technol., Hsinchu, Taiwan
Abstract :
The electrical, physical, and barrier properties of PVD refractory metal carbide (TiCx, TaCx, and WCx) thin films were investigated for Cu metallization. The 60-nm thick TiCx, TaCx, and WCx exhibit a resistivity of 1200, 385, and 227 μΩ-cm, respectively. Although XRD and sheet resistance measurements indicate that the thermal stability of TaCx is about 50-100°C higher, the maximum stability temperature based on the diode leakage data is about the same among all three materials.
Keywords :
X-ray diffraction; copper; diffusion barriers; electrical resistivity; metallisation; refractories; thermal stability; Cu; PVD; TaC; TiC; WC; X-ray diffraction; copper metallization; diffusion barrier; diode leakage current; electrical resistivity; refractory metal carbide; sheet resistance; thermal stability; Atherosclerosis; Conductivity; Copper; Electrical resistance measurement; Metallization; Temperature; Thermal resistance; Thermal stability; Transistors; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930060
