Terahertz Photomixing in Heterostructure Device Based on Integration of High-Electron Mobility Transistor and Quantum-Well Infrared Photodetector

We propose and evaluate the excitation of terahertz (THz) oscillations in a heterostructure photomixing device based on the integration of a high-electron-mobility transistor (HEMT) and quantum-well infrared photodetector (QWIP) caused by middle or far infrared signals. The transient infrared radiation results in the ac current across the QWIP active region. This ac current excites THz plasma oscillations in the HEMT channel and, consequently, oscillating charges in contacts and an antenna that leads to THz emission. We develop a device model for HEMT-QWIP photomixer which combines both analytical description of electron processes and their ensemble Monte Carlo particle modeling.