• DocumentCode
    3195149
  • Title

    Carrier injection-level dependence of lateral ambipolar diffusion in S-K quantum-dot lasers

  • Author

    Naidu, D. ; Smowton, P.M. ; Summers, H.D.

  • Author_Institution
    Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    67
  • Lastpage
    68
  • Abstract
    A strong variation in the lateral ambipolar diffusion length (Ld) with injection-level in quantum-dot lasers results in two regimes of low Ld. Only one of these should be used for efficient laser operation.
  • Keywords
    carrier lifetime; quantum dot lasers; S-K quantum-dot lasers; carrier injection-level lasers; laser operation; lateral ambipolar diffusion length; Current density; Materials; Optical losses; Quantum dot lasers; Quantum dots; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642750
  • Filename
    5642750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3195149