DocumentCode
31975
Title
A Time-Domain High-Order MASH
ADC Using Voltage-Controlled Gated-Ring Oscillator
Author
Yu, Weimin ; Kim, Jung-Ho ; Kim, Kunsu ; Cho, Sangyeun
Author_Institution
Department of Electrical Engineering, KAIST, Daejeon, Republic of Korea
Volume
60
Issue
4
fYear
2013
fDate
Apr-13
Firstpage
856
Lastpage
866
Abstract
In this paper, a time-domain high-order
analog-to-digital converter (ADC) using voltage-controlled gated-ring oscillator (VC-GRO) and time-domain multi-stage-noise-shaping (MASH) is introduced. To implement the high-order noise transfer function (NTF), a voltage-controlled oscillator (VCO) and VC-GRO quantizers are cascaded. Unlike conventional high-order
ADC using feedback loop, the proposed ADC has advantages that the architecture is open-loop and the quantizer resolution depends on the time resolution, thus making it attractive for deep submicron CMOS process. The performance of the proposed ADC is theoretically analyzed and simulated, including non-ideal conditions such as nonlinearity, mismatch, propagation delay of logic gates, phase noise, and sampling clock jitter.
Keywords
Logic gates; Modulation; Multi-stage noise shaping; Quantization; Time domain analysis; Voltage-controlled oscillators; Analog-to-digital; analog-to-digital converter (ADC); delta-sigma; gated-ring oscillator (GRO); multi-stage- noise-shaping (MASH); noise shaping; nonidealities; oversampling; time-domain; voltage-controlled gated-ring oscillator (VC-GRO); voltage-controlled oscillator (VCO);
fLanguage
English
Journal_Title
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher
ieee
ISSN
1549-8328
Type
jour
DOI
10.1109/TCSI.2012.2209298
Filename
6266713
Link To Document