Title :
Future memory technology including emerging new memories
Author :
Kim, Kinam ; Koh, Gwan-Hyeob
Author_Institution :
Memory Div., Samsung Electron. Co., Yongin-City, South Korea
Abstract :
There have been concerns about how far we can extend the so far so successful conventional semiconductor memories Such as DRAM, SRAM and Flash memory and what will be the future directions of memory development. In this article, we will review the key technical limits of conventional memory scaling and the directions to overcome the problem. In addition, we will review the technical challenges and opportunities of emerging. new memories such as ferroelectric RAM (FRAM), magnetic RAM (MRAM) and phase change RAM (PRAM) which has been recently focused as candidates for ideal memory which can solve the problems of conventional memories.
Keywords :
DRAM chips; SRAM chips; flash memories; DRAM; Flash memory; SRAM; ferroelectric RAM; future memory technology; magnetic RAM; phase change RAM; CMOS technology; Costs; Doping; Ferroelectric films; Flash memory; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory; Semiconductor memory;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314646
