Title :
Characterization of surface profile for surface activated bonding by using Power Spectral Density function
Author :
Tsukamoto, Kei ; Suga, Tadatomo
Author_Institution :
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
In Surface Activated Bonding (SAB), high surface flatness is required for the stability of bonding. Though RMS (Root Mean Square) is often used for the evaluation of surface roughness, RMS is not always enough to express surface roughness appropriately. Therefore, we introduced a numerical method called as Power Spectral Density function to the surfaces of bonding targets. In this research silicon, gold and copper samples are evaluated.
Keywords :
bonding processes; integrated circuit packaging; surface roughness; RMS; SAB; bonding stability; microelectronic packaging; numerical method; power spectral density function; root mean square; surface activated bonding; surface flatness; surface profile characterization; surface roughness evaluation; Radiation effects;
Conference_Titel :
Electronic System-Integration Technology Conference (ESTC), 2010 3rd
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-8553-6
Electronic_ISBN :
978-1-4244-8554-3
DOI :
10.1109/ESTC.2010.5642889
