Fast switching of drift step recovery diodes based on all epi-Si growth

Author

Merensky, Lev M. ; Shafir, Inbar ; Sharabani, Yaakov ; Eger, David ; Oron, Moshe ; Kardo-Sysoev, Alexei F. ; Shmilovitz, Doron ; Sher, Ariel ; Kesar, Amit S.

Author_Institution

Soreq Nucl. Res. Center, Yavne, Israel

fYear

2009

fDate

9-11 Nov. 2009

Firstpage

1

Lastpage

4

Abstract

DSRDs are fast HV opening switching devices. Traditionally, these deep junction devices are fabricated on silicon wafers by deep diffusion. We present DSRD results based on silicon epitaxial layers with as-grown junctions. Static measurements showed a rectifying behavior with leakage currents proportional to device dimension. Pulsed power measurements showed that the switching rate was dependant on the DSRD current density.

Keywords

current density; diffusion; elemental semiconductors; epitaxial growth; leakage currents; power semiconductor diodes; pulsed power switches; rectification; semiconductor epitaxial layers; silicon; DSRD current density; Si; as-grown junctions; deep diffusion; deep junction devices; diode switching; drift step recovery diodes; epitaxial growth; fast HV opening switching devices; leakage currents; pulsed power measurements; silicon epitaxial layers; silicon wafers; static measurements; Circuit testing; Current measurement; Electrical resistance measurement; Power semiconductor switches; Semiconductor diodes; Semiconductor epitaxial layers; Shape; Substrates; Surface resistance; Voltage; Pulse generation; semiconductor epitaxial layers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on

Conference_Location

Tel Aviv

Print_ISBN

978-1-4244-3985-0

Type

conf

DOI

10.1109/COMCAS.2009.5385950

Filename

5385950