DocumentCode :
3198396
Title :
Reliability degradation of MOS transistors originated from plasma process-induced charging of circuit blocks and detected with fWLR methods
Author :
Martin, Andreas ; Wagner, Cajetan ; Koten, Andreas ; Schwerd, Markus
Author_Institution :
Central Reliability Dept., Infineon Technol. AG, Neubiberg, Germany
fYear :
2011
fDate :
16-20 Oct. 2011
Firstpage :
82
Lastpage :
86
Abstract :
The effect of plasma process induced charging of remote circuit blocks and consequently the reliability damage on a single MOS transistor which is connected to such a circuit block is demonstrated for the first time. Traditional methods of characterizing gate electrode antennas do not cover this topic. A new product relevant plasma-induced damage test structure type is introduced as well as a new definition of the antenna ratio to describe the damage potential of a circuit block. This investigation is carried out for a standard 130nm bulk-Si technology with a deep trench process.
Keywords :
MOSFET; semiconductor device reliability; semiconductor device testing; MOS transistor reliability degradation; bulk-silicontechnology; fWLR methods; fast wafer level reliability method; gate electrode antennas; plasma process-induced charging; plasma-induced damage test structure; remote circuit blocks; size 130 nm; Antennas; Integrated circuit reliability; Logic gates; MOSFETs; Monitoring; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4577-0113-9
Type :
conf
DOI :
10.1109/IIRW.2011.6142594
Filename :
6142594
Link To Document :
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