Title :
A 40 GHz power amplifier using a low cost high volume 0.15 um optical lithography pHEMT process
Author :
Mays, Kenneth W.
Author_Institution :
TriQuint Semicond., Hillsboro, OR, USA
Abstract :
A 40 GHz power amplifier is realized with a new 0.15 um optical lithography pHEMT process developed for low-cost microwave and millimeter wave circuits. Several Ka and V band market requirements have driven demand for higher bandwidth, low-cost, integrated circuits. A 40 GHz power amplifier is used to demonstrate the process capabilities, starting from the initial design phase and culminating with the fabrication and measurement of the solid state power amplifier.
Keywords :
millimetre wave power amplifiers; photolithography; power HEMT; frequency 40 GHz; low-cost microwave circuit; millimeter wave circuit; optical lithography; pHEMT process; size 0.15 mum; solid state power amplifier; Costs; High power amplifiers; Lithography; Microwave amplifiers; Millimeter wave integrated circuits; Optical amplifiers; PHEMTs; Power amplifiers; Semiconductor optical amplifiers; Stimulated emission; Microstrip components; impedance matching; millimeter wave power amplifier; pHEMT;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4244-3985-0
DOI :
10.1109/COMCAS.2009.5385967
