• DocumentCode
    3198545
  • Title

    The effect of fluorine implant on NBTI behaviour in BCD-processes

  • Author

    Olthof, Edgar ; Combrié, Martin ; Van Marwijk, Leo ; Claes, Jan ; Dubois, Jerôme ; Thillaigovindan, Jayaraj ; Sun, Jianhua ; Ng, William

  • Author_Institution
    NXP Semicond., Nijmegen, Netherlands
  • fYear
    2011
  • fDate
    16-20 Oct. 2011
  • Firstpage
    105
  • Lastpage
    106
  • Abstract
    Implanting fluorine in pMOST devices was used to reduce their susceptibility to NBTI. The exact process step at which this implant is performed, determines the effectiveness of this reduction. This article presents the results of several experiments that were conducted in implanting fluorine.
  • Keywords
    MOSFET; fluorine; semiconductor device reliability; BCD-processes; NBTI behaviour; fluorine implant; pMOST devices; Degradation; Implants; Resistance; Semiconductor device reliability; Stress; Threshold voltage; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4577-0113-9
  • Type

    conf

  • DOI
    10.1109/IIRW.2011.6142600
  • Filename
    6142600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3198545