• DocumentCode
    3198587
  • Title

    Impact of gate length and gate oxide thickness on the relationship of FN-stress induced degradation parameters

  • Author

    Kang, Y.H. ; Lee, C.W. ; Kim, H.U. ; Ryu, Y.K. ; Kim, H.S. ; Jung, T.S.

  • Author_Institution
    Memory Div., Samsung Electron., Hwasung, South Korea
  • fYear
    2011
  • fDate
    16-20 Oct. 2011
  • Firstpage
    115
  • Lastpage
    116
  • Abstract
    The Fowler-Nordheim (FN) stress on PMOSFET cause Idsat decrease and Vth increase. In this work, we have investigated FN stress induced device degradation mechanisms in PMOSFETs with different gate length and oxide thickness. We describe a quantitative relationship between Idsat, Idlin and Vth change under FN stress condition.
  • Keywords
    MOSFET; semiconductor device reliability; FN-stress-induced degradation parameters; Fowler-Nordheim stress; PMOSFET; gate length; gate oxide thickness; Degradation; Electric fields; Logic gates; MOSFET circuits; MOSFETs; Stress; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4577-0113-9
  • Type

    conf

  • DOI
    10.1109/IIRW.2011.6142603
  • Filename
    6142603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3198587