Reliability testing of Cu-Sn intermetallic micro-bump interconnections for 3D-device stacking

Author

Labie, Riet ; Limaye, P. ; Lee, K.W. ; Berry, C.J. ; Beyne, E. ; De Wolf, I.

fYear

2010

fDate

13-16 Sept. 2010

Firstpage

1

Lastpage

5

Abstract

In this work, two different reliability experiments, thermal cycling and electromigration, are performed on fully packaged Si-to-Si stacks bonded with Cu-Sn intermetallic (IMC) micro-bumps. These experiments investigate both the more critical thermo-mechanical behavior as well as the expected positive thermal-electrical behavior. The Cu-Sn IMC bumps survive thermal cycling for more than 3900 cycles between -40 and 125°C with 1 hour per cycle. The resistance to electromigration is strongly dependant on the used Sn thickness and shows an improved performance for thinner Sn samples (3.5μm) compared to thicker Sn (8μm). In either case, IMC bumps outperform standard solder flip chip bumps.

Keywords

copper alloys; electromigration; flip-chip devices; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; silicon alloys; solders; tin alloys; 3D-device stacking; Cu-Sn; Si; electromigration; intermetallic microbump interconnections; positive thermal-electrical behavior; reliability testing; solder flip chip bumps; temperature 125 degC; thermal cycling; thermomechanical behavior; Bonding; Copper; Intermetallic; Joints; Resistance; Temperature measurement; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic System-Integration Technology Conference (ESTC), 2010 3rd

Conference_Location

Berlin

Print_ISBN

978-1-4244-8553-6

Electronic_ISBN

978-1-4244-8554-3

Type

conf

DOI

10.1109/ESTC.2010.5642925

Filename

5642925