Influence of the GA Content on the Mo/Cu(In,Ga)Se2 Interface Formation

Author

Witte, Wolfram ; Kniese, Robert ; Eicke, Axel ; Powalla, Michael

Author_Institution

Zentrum fur Sonnenenergie-und Wasserstoff-Forschung Baden-Wurttemberg, Stuttgart

Volume

1

fYear

2006

fDate

38838

Firstpage

553

Lastpage

556

Abstract

Culn_1-xGa_xSe₂ (CIGS) thin films with various Ga contents x were characterized by micro-Raman spectroscopy. All samples were investigated using the 532 nm line of a Nd:YAG laser in the back-scattering geometry. A linear increase of the frequency of the chalcopyrite A₁ mode from 174 cm^-1 to 184 cm^-1 with increasing Ga content was observed. Special attention was directed to the interface between the CIGS absorber and the Mo back contact. Sputtered neutral mass spectroscopy (SNMS) and Raman line scans on cross-sections revealed a reduced formation of MoSe₂ at the Mo/CIGS interface for higher Ga contents

Keywords

Raman spectra; copper compounds; indium compounds; mass spectra; molybdenum; semiconductor thin films; semiconductor-metal boundaries; ternary semiconductors; 532 nm; Mo-CuIn_1-xGa_xSe₂; Raman line scans; back-scattering geometry; chalcopyrite frequency; interface formation; micro-Raman spectra; sputtered neutral mass spectroscopy; thin films; Crystalline materials; Geometrical optics; Laser modes; Mass spectroscopy; Photonic band gap; Photovoltaic cells; Sputtering; Temperature measurement; Temperature sensors; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279515

Filename

4059688