Oxide based compound semiconductor electronics

Author

Mishra, U.K. ; Parikh, P. ; Chavarkar, P. ; Yen, J. ; Champlain, J. ; Thibeault, B. ; Reese, H. ; Song Stone Shi ; Hu, E. ; Lijie Zhu ; Speck, J.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

545

Lastpage

548

Abstract

The discovery of an oxide created by the wet thermal oxidation of Al/sub x/Ga/sub 1-x/As compounds has created excitement in the general field of wet thermal oxidation of Al bearing compound semiconductor. We have investigated the use of these oxides for a variety of electronic applications in III-V technology. We have demonstrated oxide based MISFETs and GaAs On Insulator (GOI) technologies for high efficiency electronics as well as novel applications such as current aperturing for RTD´s and vertical transistors.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; oxidation; resonant tunnelling diodes; semiconductor technology; Al/sub x/Ga/sub 1-x/As; AlGaAs; GOI; GaAs; III-V technology; MISFET; RTD; compound semiconductor electronics; current aperturing; oxide; vertical transistor; wet thermal oxidation; Apertures; CMOS technology; Electrons; FETs; Furnaces; Gallium arsenide; Insulation; MOSFETs; Oxidation; Parasitic capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650443

Filename

650443