DocumentCode
3200875
Title
RF Dielectric Properties of SIC Ceramics and their Application to Design of HOM Absorbers
Author
Takeuchi, Y. ; Abe, T. ; Kageyama, T. ; Sakai, H.
Author_Institution
KEK, Tsukuba, 305-0801, Japan
fYear
2005
fDate
16-20 May 2005
Firstpage
1195
Lastpage
1197
Abstract
The KEKB ARES cavity is equipped with two types of HOM absorbers, which are made of different commercial products of the alpha-type SiC ceramics. Their dielectric responses to the RF frequency show the dielectric relaxation properties. These properties can be explained by the polycrystal structure model with electrically conductive grains and non-conductive grain boundaries. In this article, the RF dielectric properties of the SiC ceramics are discussed together with the application to HOM absorbers.
Keywords
Ceramics; Conducting materials; Crystalline materials; Dielectric materials; Dielectric measurements; Frequency measurement; Grain boundaries; Permittivity measurement; Radio frequency; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Particle Accelerator Conference, 2005. PAC 2005. Proceedings of the
Print_ISBN
0-7803-8859-3
Type
conf
DOI
10.1109/PAC.2005.1590705
Filename
1590705
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