• DocumentCode
    3201057
  • Title

    N-Type Bifacial Solar Cells with Laser Doped Contacts

  • Author

    Abbott, M.D. ; Cotter, J.E. ; Fisher, K.

  • Author_Institution
    Centre for Excellence for Adv. Silicon Photovoltaic & Photonics, New South Wales Univ., Sydney, NSW
  • Volume
    1
  • fYear
    2006
  • fDate
    38838
  • Firstpage
    988
  • Lastpage
    991
  • Abstract
    Laser doping is investigated as an alternative to high-temperature furnace diffusions to form contacts on bifacial n-type silicon solar cells. A process is demonstrated in which a single laser step forms both selective heavily doped contact regions and defines a mask for subsequent electro-less metal plating. The integration of the laser doped contacts with solar cell structures is investigated in terms of minority carrier recombination, metal plating and electrical properties of finished devices. The process is shown to be a promising alternative to furnace diffusions and may provide a more industrially applicable technique for fabricating bifacial n-type solar cells
  • Keywords
    carrier mobility; doping; electroplating; elemental semiconductors; masks; silicon; solar cells; Si; electrical properties; electroless metal plating; high-temperature furnace diffusions; laser doping; mask; minority carrier recombination; n-type bifacial solar cells; Atom lasers; Atomic beams; Dielectrics; Doping; Furnaces; Optical device fabrication; Optical pulses; Photovoltaic cells; Silicon; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    1-4244-0017-1
  • Electronic_ISBN
    1-4244-0017-1
  • Type

    conf

  • DOI
    10.1109/WCPEC.2006.279284
  • Filename
    4059796