DocumentCode
3201057
Title
N-Type Bifacial Solar Cells with Laser Doped Contacts
Author
Abbott, M.D. ; Cotter, J.E. ; Fisher, K.
Author_Institution
Centre for Excellence for Adv. Silicon Photovoltaic & Photonics, New South Wales Univ., Sydney, NSW
Volume
1
fYear
2006
fDate
38838
Firstpage
988
Lastpage
991
Abstract
Laser doping is investigated as an alternative to high-temperature furnace diffusions to form contacts on bifacial n-type silicon solar cells. A process is demonstrated in which a single laser step forms both selective heavily doped contact regions and defines a mask for subsequent electro-less metal plating. The integration of the laser doped contacts with solar cell structures is investigated in terms of minority carrier recombination, metal plating and electrical properties of finished devices. The process is shown to be a promising alternative to furnace diffusions and may provide a more industrially applicable technique for fabricating bifacial n-type solar cells
Keywords
carrier mobility; doping; electroplating; elemental semiconductors; masks; silicon; solar cells; Si; electrical properties; electroless metal plating; high-temperature furnace diffusions; laser doping; mask; minority carrier recombination; n-type bifacial solar cells; Atom lasers; Atomic beams; Dielectrics; Doping; Furnaces; Optical device fabrication; Optical pulses; Photovoltaic cells; Silicon; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
1-4244-0017-1
Electronic_ISBN
1-4244-0017-1
Type
conf
DOI
10.1109/WCPEC.2006.279284
Filename
4059796
Link To Document