DocumentCode
3201233
Title
DC-20 GHz N*M passive switches
Author
Schindler, M.J. ; Miller, M.E. ; Simon, K.M.
Author_Institution
Raytheon Co., Lexington, MA, USA
fYear
1988
fDate
25-27 May 1988
Firstpage
1001
Abstract
The author demonstrate monolithic microwave integrated circuit (MMIC) switch networks with complexities up to 4*4 have been demonstrated using multiple chips, and up to 2*2 and 1*4 have been demonstrated using single chips. All the switches use a combination of series and shunt passive FET switching elements. The 1*2 and 1*4 switches are comprised of a single switching stage. The 2*2 switch comprised of two stages of 1*2 switches. The 4*4 switch is made of four stages of 1*2 switches. The insertion loss increases with switch complexity, and is equivalent to 1.5 to 2 dB per 1*2 switch. All the switches are passive and bidirectional, and all operate from DC to 20 GHz.<>
Keywords
field effect integrated circuits; microwave integrated circuits; switching circuits; 0 to 20 GHz; FET switching elements; MMIC; SHF; monolithic microwave integrated circuit; passive switches; series type shunt type bidirectional type; switch networks; Arm; FETs; Insertion loss; Ion implantation; MMICs; Microwave Theory and Techniques Society; Radio frequency; Resistors; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MWSYM.1988.22200
Filename
22200
Link To Document