Development of p-type microcrystalline silicon-carbon alloy thin film at low power and its application in tunnel junctions [solar cells]

Author

Ray, Swati ; Desgupta, A. ; Barua, A.K.

Author_Institution

Energy Res. Unit, Indian Assoc. for the Cultivation of Sci., Calcutta, India

fYear

1996

fDate

13-17 May 1996

Firstpage

1121

Lastpage

1124

Abstract

Wide band gap anti-highly conducting p-type microcrystalline silicon carbide (μc-SiC:H) thin films have been prepared at low power (39 mW/cm²) by a conventional RF-PECVD technique. The dark conductivity of the films varies from 8-0.11 S cm^-1 whereas the E₀₄ value varies from 1.95-2.35 eV, for different carbon incorporations. These films have been applied in an incomplete double junction solar cell structure, viz. glass/TCO/p/i/n⁺/p⁺/Al to study the tunneling effect

Keywords

dark conductivity; energy gap; hydrogen; plasma CVD; plasma CVD coatings; semiconductor device testing; semiconductor doping; semiconductor growth; semiconductor thin films; silicon compounds; solar cells; tunnelling; μc-SiC:H thin film solar cells; 1.95 to 2.35 eV; 8 to 0.11 S/cm; RF-PECVD technique; SiC:H; carbon incorporations; dark conductivity; double junction solar cell structure; tunneling effect; Artificial intelligence; Glass; Optical films; Photovoltaic cells; Semiconductor thin films; Silicon alloys; Silicon carbide; Transistors; Tunneling; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564328

Filename

564328