Good Surface Passivation of C-SI by High Rate Plasma Deposited Silicon Oxide

Author

Hoex, B. ; Peeters, F.J.J. ; Creatore, M. ; Bijker, M.D. ; Kessels, W.M.M. ; van de Sanden, Mauritius C. M.

Author_Institution

Dept. of Appl. Phys., Eindhoven Univ. of Technol.

Volume

1

fYear

2006

fDate

38838

Firstpage

1134

Lastpage

1137

Abstract

Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC

Keywords

Fourier transform spectra; Rutherford backscattering; elemental semiconductors; infrared spectra; passivation; plasma CVD; silicon; silicon compounds; thin films; 600 C; FZ crystalline silicon wafers; Fourier transform infrared spectroscopy; Rutherford backscattering; Si; SiO₂; argon-oxygen-octamethylcyclotetrasiloxane; high rate plasma deposited silicon oxide; silicon; silicon dioxide films; spectroscopic ellipsometry; surface passivation; thermal plasma technique; Ellipsometry; Fourier transforms; Gas industry; Infrared spectra; Passivation; Plasma applications; Semiconductor films; Silicon compounds; Spectroscopy; Thermal expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279361

Filename

4059834