Title :
An extended complex finite difference method for the analysis of semiconductor lasers with electrode discontinuities
Author :
Shuoqi Chen ; Vahldieck, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
Abstract :
The complex finite difference method is extended to form a self-consistent 3-D analysis tool for gain- and index-guided semiconductor lasers. Single- and double-strip laser diodes with and without strip discontinuities (to accommodate the bias current contact pad) are investigated by directly discretizing the 3-D Laplace equation, the 2-D carrier rate equation and the scalar wave equation. In combination with the Rayleigh variational principle, the complex propagation constant of the first two lowest order laser modes can be calculated as well as the complex refractive index distribution in the active layer.<>
Keywords :
Laplace equations; finite difference methods; laser modes; laser theory; refractive index; semiconductor lasers; variational techniques; 2D carrier rate equation; 3D Laplace equation; Rayleigh variational principle; bias current contact pad; complex finite difference method; complex propagation constant; complex refractive index distribution; double-strip laser diodes; electrode discontinuities; gain-guided semiconductor lasers; index-guided semiconductor lasers; lowest order laser modes; scalar wave equation; self-consistent 3D analysis tool; single-strip laser diodes; strip discontinuities; Diode lasers; Electrodes; Finite difference methods; Laplace equations; Laser modes; Masers; Refractive index; Semiconductor lasers; Strips; Transmission line theory;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405985
