Title :
Enhancement of light emission from silicon by a photonic crystal nanocavity and high-pressure water vapor annealing
Author :
Fujita, Masayuki ; Gelloz, Bernard ; Koshida, Nobuyoshi ; Noda, Susumu
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Abstract :
We propose and demonstrate the application of high-pressure water vapor annealing (HWA) to silicon photonic-crystal nanocavities for surface passivation. We find that HWA boosts light emission due to the reduction of surface recombination beyond simply using the cavity effect.
Keywords :
annealing; elemental semiconductors; passivation; photonic crystals; silicon; surface recombination; high-pressure water vapor annealing; light emission enhancement; photonic crystal nanocavity; silicon photonic-crystal nanocavities; surface passivation; surface recombination; Cavity resonators; Optical surface waves; Photonic crystals; Silicon; Spontaneous emission; Surface treatment;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643328
